The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 1988
Filed:
Nov. 25, 1987
Applicant:
Inventors:
John C Bean, New Providence, NJ (US);
David V Lang, Madison, NJ (US);
Thomas P Pearsall, Summit, NJ (US);
Roosevelt People, Plainfield, NJ (US);
Henryk Temkin, Berkeley Heights, NJ (US);
Assignee:
Other;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357-4 ; 357 30 ; 357 13 ; 357 16 ;
Abstract
A strained layer superlattice comprising Ge.sub.x Si.sub.1-x layers interleaved with Si layers is an excellent photodetector at infrared wavelengths due to the large shift in bandgap caused by the strain in the superlattice.
Bean, John. (1988). Device having strain induced region of altered bandgap (U.S. Patent No. 4772924). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4772924
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile