The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 1988
Filed:
Nov. 04, 1987
Toshikazu Tsukii, Santa Barbara, CA (US);
Yalcin Ayasli, Lexington, MA (US);
Raytheon Company, Lexington, MA (US);
Abstract
A distributed circuit includes a plurality of field effect transistors (FETS), each one of such FETS having gate, drain and source electrodes, with a first portion, or a first channel, of such FETS having gate electrodes and drain electrodes successively coupled between a first input terminal and an output terminal, and a second like portion or a second channel of such FETS having gate electrodes and drain electrodes successively coupled between a second input terminal and said output terminal. Separate bias circuits are provided to the input electrodes of the first and second channels. Bias signals fed to the bias circuits and coupled to the input electrodes place the FETS in an 'on' state to provide gain to r.f. input signals fed thereto, or in a 'pinch-off' state to isolate r.f. signals fed to the input electrodes of the FETS. Accordingly, a 2.times.1 switch or a two way active r.f. combiner which provides gain to a signal is provided.