The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 1988
Filed:
May. 29, 1987
Applicant:
Inventor:
Lubomir L Jastrzebski, Plainsboro, NJ (US);
Assignee:
General Electric Company, Schenectady, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 34 ; 437 89 ; 437156 ; 437913 ; 437915 ;
Abstract
The present invention is a method of making an integrated circuit device including a pair of MOSFETs each of which has a source or drain region which shares a common active region with the other. The method includes forming an epitaxial layer from nucleation sites, one of which is the source or drain region of the first MOSFET. The second MOSFET is then formed in the epitaxial layer so that one of the source or drain regions extends from one of the nucleation sites.