The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 20, 1988

Filed:

Jul. 01, 1987
Applicant:
Inventors:

Peter J Zdebel, Mesa, AZ (US);

Bor-Yuan Hwang, Chandler, AZ (US);

Allen J Wagner, Phoenix, AZ (US);

Assignee:

Motorola Inc., Schaumburg, IL (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437032 ; 357 34 ; 357 91 ; 437 29 ; 437 31 ; 437 26 ; 437 69 ;
Abstract

A means and method for forming a single tub transistor, such as for example a vertical NPN bipolar transistor surrounded by an isolation wall, is described. Multiple polysilicon and dielectric layers are employed in conjunction with a master mask and with isotropic and anisotropic etching procedures to define the contacts and active regions of the device without resorting to precision alignments. Sub-micron lateral device contacts are easily achieved even with comparatively coarse lithographic methods through use of sidewall spacers for controlled narrowing of critical device openings. The finished device is especially compact, has low resistance contacts for its size, and provides very high speed operation.


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