The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 20, 1988

Filed:

May. 12, 1987
Applicant:
Inventor:

Thomas M Potts, Joplin, MO (US);

Assignee:

Eagle-Picher Industries, Inc., Cincinnati, OH (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B01D / ;
U.S. Cl.
CPC ...
55 67 ; 55 72 ; 423 87 ; 423130 ;
Abstract

Thermally decomposable Group IIIa compounds are purified by conveying the relatively impure material through a prescrubber module, then heating the scrubbed Group IIIa compound and conveying same through a preconditioned gas chromatographic column packed with a porous polymeric material. After isolation, the purified material is cooled, demisted amd collected. Thermally decomposable Group Va compounds are purified by conveying the heated relatively impure material through a preconditioned gas chromatographic column packed with a porous polymeric material. After isolation, the purified material is cooled and collected. Epitaxial semiconductor films of purified thermally decomposable Group IIIa and Group Va compounds with added dopant are prepared by diluting the film components with inert carrier gas to predetermined concentration levels, thoroughly mixing the components, then depositing a crystal layer prepared from the mixed components onto a substrate by thermally decomposing the mixed components in a reactor.


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