The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 1988
Filed:
Nov. 20, 1987
Kouichiro Odani, Sagamihara, JP;
Takashi Mimura, Machida, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A depletion type element under the category of heterojunction field effect element having an n-region arranged in contact with a two-dimensional electron gas. More specifically a very limited region of the upper surface of the heterojunction faces the bottom surface of a gate electrode, thereby realizing various advantages, e.g.; (1) electron mobility is increased; (2) the resistivity is decreased in the source and drain regions as well as in the regions connecting the source and drain regions and the region facing the gate electrode; (3) the power consumption is decreased; (4) the reproductivity is improved, and (5) the overall reliability is improved.