The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 13, 1988

Filed:

Dec. 18, 1986
Applicant:
Inventors:

Toshihiko Arakawa, Yokohama, JP;

Kuniyoshi Ueda, Yokohama, JP;

Naomichi Sakai, Ayase, JP;

Takaaki Tsukidate, Hino, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01B / ;
U.S. Cl.
CPC ...
264 66 ; 423344 ;
Abstract

Disclosed is a process for the preparation of high .alpha.-type silicon nitride powder, wherein a nitrogen-containing silane compound and/or amorphous silicon nitride is crystallized to form crystalline silicon nitride. In this process, crystalline silicon nitride having a particle size not larger than 0.05 .mu.m is incorporated in an amount of at least 0.1% by weight into the nitrogen-containing silane compound and/or amorphous silicon nitride, the mixture is formed into a power or molded body having a powder bulk density of at least 0.1 g/cm.sup.3 as silicon, and the powder or molded body is heated to 1,350.degree. to 1,700.degree. C. while controlling the temperature-elevating rate to at least 15.degree. C./min throughout the temperature range of from 1,200.degree. to 1,350.degree. C. The resulting high .alpha.-type silicon nitride is composed of a fine granular crystal and the does not contain a needle crystal or columnar crystal.


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