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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 4769687 B1

PDFFull Text
Date of Patent:
Sep. 06, 1988

Filed:

Apr. 20, 1987

Lateral bipolar transistor and method of producing the same

Applicant:
Inventors:

Kazuo Nakazato, Hachioji, JP;

Tohru Nakamura, Tanashi, JP;

Masataka Kato, Kokubunji, JP;

Takahiro Okabe, Nishitama, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:

Antonelli, Terry & Wands

Primary Examiner:

Andrew J James

Assistant Examiner:

John Lamont

Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 35 ; 357 44 ; 357 46 ; 357 59 ; 357 92 ;
Abstract

A lateral bipolar transistor affording a good controllability for a base length is disclosed. In fabricating a lateral bipolar transistor by forming a single crystal column and disposing heavily doped polycrystalline regions on both sides of the column, contact surfaces between the single crystal column and the heavily doped polycrystalline regions are controlled by etching of an oxide film. The etching of the oxide film can provide a device of a precision higher than attained by controlling any other element.

Find Patent Forward Citations

Nakazato, Kazuo. (1988). Lateral bipolar transistor and method of producing the same (U.S. Patent No. 4769687). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4769687

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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