The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 1988
Filed:
Apr. 20, 1987
Applicant:
Inventors:
Kazuo Nakazato, Hachioji, JP;
Tohru Nakamura, Tanashi, JP;
Masataka Kato, Kokubunji, JP;
Takahiro Okabe, Nishitama, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 35 ; 357 44 ; 357 46 ; 357 59 ; 357 92 ;
Abstract
A lateral bipolar transistor affording a good controllability for a base length is disclosed. In fabricating a lateral bipolar transistor by forming a single crystal column and disposing heavily doped polycrystalline regions on both sides of the column, contact surfaces between the single crystal column and the heavily doped polycrystalline regions are controlled by etching of an oxide film. The etching of the oxide film can provide a device of a precision higher than attained by controlling any other element.