The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 1988
Filed:
Jun. 17, 1986
Kunihiko Isshiki, Itami, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor light emission device includes: a first conductivity type semiconductor substrate which has a pair of confronting resonator end surfaces and a hollow section provided thereon. The hollow section is arranged in a direction vertical the direction in which the resonator end surfaces confront each other. A second conductivity type current blocking layer having a flat upper surface is provided on the entire upper surface of the semiconductor substrate. A stripe groove is provided in the current blocking layer extending in a direction between the resonator end surfaces in such a manner that the groove reaches only within the current blocking layer at the hollow section and reaches the semiconductor substrate through the current blocking layer at portions outside the hollow section. A first conductivity type lower clad layer is provided on the entire upper surface of the current blocking layer so as to embed the stripe groove. A first or second conductivity type active layer is provided on the entire upper surface of the lower clad layer, and a second conductivity type upper clad layer is provided on the entire upper surface of the active layer.