The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 1988
Filed:
Jul. 07, 1986
Applicant:
Inventor:
Hartmut Schrenk, Haar, DE;
Assignee:
Siemens Aktiengesellschaft, Berlin and Munich, DE;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K / ; H03K / ; H03K / ; G11C / ;
U.S. Cl.
CPC ...
307450 ; 307270 ; 307581 ; 307264 ; 307475 ; 365226 ; 365104 ;
Abstract
A MOS inverter circuit includes a first supply voltage source, a second supply voltage source being higher than the first supply voltage source, a control MOS FET of the enhancement type, a first load MOS FET of the depletion type connected to the control MOS FET, a parallel circuit of a second load MOS FET of the depletion type and a third MOS FET, the parallel circuit being connected in series with the first load MOS FET, the third MOS FET having a controlled path connected to the first supply voltage source, and the first and second load MOS FET's having controlled paths interconnected in series and connected to the second supply voltage source.