The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 23, 1988

Filed:

Dec. 26, 1985
Applicant:
Inventor:

Yasuo Kobayashi, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C / ; G11C / ;
U.S. Cl.
CPC ...
365190 ; 365233 ; 365189 ;
Abstract

A semiconductor memory is disclosed which attains a data read operation at a high speed with a low power dissipation. The memory includes a sense amplifier amplifying a data signal stored in the selected memory cell, a data latch circuit latching the output signal of the sense amplifier, a switching circuit outputting the output signal of the sense amplifier before the data latch circuit latches the output signal of the sense amplifier and outputting the output signal of the data latch circuit after the data latch circuit latches the output signal of the sense amplifier, and an output circuit producing an output data signal responsive to the output signal of the switching circuit.


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Kobayashi, Yasuo. (1988). Semiconductor memory having a bypassable data output latch (U.S. Patent No. 4766572). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4766572

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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