The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 1988
Filed:
May. 27, 1981
Applicant:
Inventors:
Assignee:
Sharp Kabushiki Kiasha, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 238 ; 357 53 ; 357 59 ;
Abstract
A MOS transistor is featured by providing mult-layered covering elements for covering a channel region of the semiconductor device. Each of the covering elements is interposed by an insulating layer. Preferably, the covering layers comprise first and second covering layers neither of which are connected to either of the drain electrode, the source electrode, or the gate electrode. A field plate layer, as a third covering layer, is disposed over the first and second covering layers.