The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 1988
Filed:
May. 04, 1987
Roy L Gealer, West Bloomfield, MI (US);
Hans K Karsten, Weidman, MI (US);
Ford Motor Company, Dearborn, MI (US);
Abstract
This invention is directed to a method for increasing the etch rate of a single crystal silicon wafer in an anisotropic etching solution. This method comprises applying a mask material to a portion of one face of the wafer and a metal coating to substantially the entire surface of an opposite face of the wafer which renders the electrode potential of the masked, metal coated single crystal silicon wafer more anodic than that of a masked, single crystal silicon wafer alone, and exposing the coated wafer to a suitable anisotropic etching solution. This method may further comprise applying an external anodic voltage to the masked, metal coated single crystal silicon wafer, which voltage is less than that which causes the electrode potential of the masked, metal coated single crystal silicon wafer to exceed the passivation potential of the masked, single crystal silicon wafer.