The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 1988
Filed:
Jul. 15, 1987
Christopher E Holland, Redwood City, CA (US);
Eugene R Westerberg, Palo Alto, CA (US);
Marc J Madou, Palo Alto, CA (US);
Takaaki Otagawa, Fremont, CA (US);
SRI International, Menlo Park, CA (US);
Abstract
A method is set forth of constructing an electrochemical cell from a crystalline slab having front and back sides facing generally away from one another. Masking layers are provided covering the front and back sides of the slab and a back resist layer is provided covering the front masking layer, the front and resist layer having at least one opening therethrough exposing a portion of the masking layer therebehind. A passage is etched through the exposed part of the back masking layer and extending into the slab to terminate at the front masking layer. A conductor is deposited in the passage. A second front masking layer is formed covering the front side other than where the passage terminates. The masking layers are etched away opposite the passage sufficiently to expose the conductor. The technology provides electrochemical cells either on or completely below the surface of a slab, for example a silicon slab. Integrated circuitry can be provided on the side of the slab removed from the electrochemistry. A multiplicity of cells can be produced simultaneously on a single slab.