The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 1988
Filed:
Sep. 12, 1986
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A GaAs (gallium arsenide) semiconductor memory device includes a plurality of memory cells connected in a matrix form by employing a plurality of bit lines and of word lines, and of word line drivers. The memory device is operable under a single power supply. Transfer gates of the memory cells are normally-on type GaAs metal-semiconductor field effect transistors (MESFET's). A parallel circuit including a Schottky diode and a switching GaAs-MESFET is interposed between commonly-connected sources of driver MESFET's of each of the memory cells and the ground line, so that a higher potential of the commonly-connected sources is clamped due to the clamping effect of the Schottky diode when the switching GaAs-MESFET is turned off.