The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 1988
Filed:
Oct. 27, 1986
Shashi D Malaviya, Hopewell Junction, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Disclosed is a submicron wide single crystal silicon structure protruding from a monolithic silicon body. This three-dimensional structure includes lower section of a first (N) conductivity type and an upper section of a second (P) conductivity type. The upper section consisting of narrow top and bottom portions separated by a relatively wide middle portion, constitutes the silicon material from which various active or passive integrated circuit devices may be fabricated. For example, in the case of an NPN transistor, the central region of the middle portion constitutes the base region, the emitter and collector being embedded in the two outer side regions thereof in a mutually facing relationship. Electrical contacts to the elements of the IC device are established on the top and/or sides of the protruding structure. Owing to its free-standing self-isolated characteristic, dielectric isolation of the IC device is not necessary. Alternatively, total dielectric isolation of the IC may be achieved by utilizing a dielectric material for the bottom of the protrusion.