The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 1988
Filed:
Aug. 24, 1987
Applicant:
Inventors:
Nadeem S Alvi, Kokomo, IN (US);
Paul E Stevenson, Kokomo, IN (US);
Assignee:
Delco Electronics Corporation, Kokomo, IN (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 56 ; 437 41 ; 437 58 ; 437 40 ; 437200 ; 437160 ; 437161 ; 437162 ; 437192 ; 357 71 ; 148D / ;
Abstract
A process for forming CMOS devices uses outdiffusion of implanted ions in a patterned refractory silicidable layer to form the source/drain regions of the device. Moreover, the oxidation of the sidewalls of openings formed in the layer serves to isolate the layer from the polysilicon gate electrode which is later formed in the openings in this layer.