The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 1988
Filed:
Apr. 06, 1987
Applicant:
Inventors:
Kuang-Yeh Chang, Austin, TX (US);
Charles F Hart, Pflugerville, TX (US);
Assignee:
Motorola, Inc., , DE (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 29 ; 437 34 ; 437 44 ; 437 57 ;
Abstract
A process for forming lightly doped drains in a CMOS circuit utilizing two photoresist masks is disclosed. After gates for N-channel and P-channel transistors have been formed, an N-implant is effected. A first photoresist mask is used as a source/drain implant is made for the P-channel transistor. Sidewall spacers are formed for the gates of both transistors. A second photoresist mask is used as a source/drain implant is made for the N-channel transistor. The resulting CMOS circuit has an N-channel transistor with a lightly doped drain and a P-channel transistor without a lightly doped drain.