The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 09, 1988

Filed:

Jun. 24, 1983
Applicant:
Inventor:

Hermanus L Peek, Eindhoven, NL;

Assignee:

U.S. Philips Corporation, New York, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 54 ; 357 59 ; 357 2314 ;
Abstract

A semiconductor device comprises a semiconductor body having a surface provided with a first insulating layer. On this first insulating layer at least one pattern of conductor strips, coated with insulation strips having projecting edges, is provided. Under projecting edges of a second insulating layer, the conductor strips are coated with insulating tracks which fill the spaces under the edges and which at least at the area where they adjoin the first insulating layer can be selectively etched with respect to this layer. The conductor strips may be made of materials other than polycrystalline silicon, such as tungsten, molybdenum, and silicides of these metals. The thickness of the first insulating layer is affected to a very small extent during manufacture of the device, while its depth remains unchanged.


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