The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 1988
Filed:
Dec. 23, 1985
George H MacMaster, Lexington, MA (US);
Lawrence J Nichols, Burlington, MA (US);
Raytheon Company, Lexington, MA (US);
Abstract
A crossed-field amplifier has a cathode in the form of a P-N junction semiconductor which is biased to the conductive state to cause the crossed-field amplifier to amplify. The P and N regions of the semiconductor are connected to an energy source which is pulsed to produce conduction in the P-N junction and thereby allow secondary emission from the cathode. A reverse bias voltage prevents secondary emission from the cathode. The tube requires only low voltages to be applied to the cathode P-N junction to completely deactivate the crossed-field amplifier tube without requiring the removal of the RF drive pulse applied to the cathode- or anode-slow-wave circuit and without requiring the removal of the DC high voltage power supply which therefore need not be pulsed.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile