The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 02, 1988

Filed:

Jul. 29, 1986
Applicant:
Inventor:

Kaoru Saito, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
365230 ; 365203 ;
Abstract

An MOS type read-only memory device having a reduced power consumption has a clock signal generator circuit for generating a pair of positive and negative clock signals by detecting a change of an address signal in the ROM having MOS transistors used as a load and connected to bit lines, a tri-state circuit including an input, a control signal input, and an ouput; the tri-state circuit has its output impedance made higher due to a clock signal supplied to the control signal input. The device also has a switching circuit for keeping the MOS transistors used as a load in their active state based on a clock signal. The inputs and outputs of the tri-state circuit are each connected to the bit lines and gates of the MOS transistors used as a load. The switching circuit is connected to the gate side of the MOS transistors used as a load.


Find Patent Forward Citations

Saito, Kaoru. (1988). Mos read-only memory device (U.S. Patent No. 4761769). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4761769

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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