The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 1988
Filed:
Mar. 25, 1987
Serge M Tavernier, Lint, BE;
Pierre R De Roo, Schoten, BE;
Jozef L Mampaey, Kontich, BE;
Robert F Janssens, Geel, BE;
AGFA-Gevaert N.V., Mortsel, BE;
Abstract
Electrophoretic process and apparatus for developing an electrostatic charge pattern carried by a dielectric surface by progressively moving that surface through a development station and simultaneously progressively advancing a layer of liquid toner (11) comprised of toner particles dispersed in a carrier liquid, through that station in proximity to said charge-carrying surface, (3), and imposing an electric field bias to cause or promote selective image-wise movement of toner particles through said liquid at said development station and deposition thereof on said charge-carrying surface in a pattern representing said electrostatic charge pattern, wherein said layer of liquid toner contains toner particles in a concentration of from 2 to 25% by weight, and including the step of applying a film of a substantially toner-free non-polar liquid which is miscible with the carrier liquid of said liquid toner and which has a specific conductivity lower than 0.2 nS/m over said liquid toner layer (11) in such manner and at such a rate that each increment of such toner layer arrives at the development station, substantially free from turbulence and covered by the film of substantially toner-free liquid, the thickness of the film being such that at the development station it just makes contact with the chargecarrying surface.