The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 1988
Filed:
Dec. 01, 1986
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
In a semiconductor laser, an active layer and a pair of cladding layers sandwiching therebetween the active layer are provided to be parallel to the plane of the substrate to form a light waveguide passage, and light from the light waveguide passage is guided toward the substrate by reflecting the same at reflecting layers formed of dielectric with the active layer and the cladding layers being cut to have slopes inclined at approximately 45 degrees with respect to the plane of the substrate. A multiquantum well layer is provided so as to change the transmittance thereof by the change of applied electric field providing extremely high speed modulation. One or more through-holes may be made in the substrate so as to derive output light therethrough. One or more of the through-holes may be filled with a reflection layer so as to selectively reflect particular wavelength light, and thus by using a plurality of such laser chips, oscillation at different wavelengths is possible.