The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 1988
Filed:
May. 12, 1986
Ernst Hebenstreit, Munich, DE;
Siemens Aktiengesellschaft, Berlin and Munich, DE;
Abstract
Power MOSFETs for switching high voltages have a relatively high on-state DC resistance. The invention provides for the connection in series of a low voltage MOSFET with a higher voltage bipolar transistor. This series circuit is connected in parallel with a series circuit consisting of another MOSFET and a threshold switch. The threshold switch is placed between the base terminal and the free terminal of the low voltage MOSFET. The MOSFETs receive a joint control signal (u.sub.1) which is routed to the low voltage MOSFET. In the case of an inductive load with recovery operation, the signal is routed through a delay element that becomes active when the circuit is turned on.