The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 1988
Filed:
Mar. 04, 1987
Applicant:
Inventor:
Wolfgang Mueller, Putzbrunn, DE;
Assignee:
Siemens Aktiengesellschaft, Berlin and Munich, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 34 ; 437 30 ; 437 57 ; 437228 ;
Abstract
The manufacture of n-channel and p-channel transistors in a CMOS process which involves employing gate spacer oxide layers for of reducing the under-diffusion of the implanted source-drain regions under the gate areas. The spacer oxide widths for the n-channel and the p-channel transistor are set differently so that both transistor types can be optimized independently of one another and without an additional expenditure for more masking steps. The method is employed for the manufacture of large scale integrated circuits for fast switching speeds.