The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 26, 1988

Filed:

Aug. 19, 1986
Applicant:
Inventors:

Christina M Knoedler, Peekskill, NY (US);

Douglas C LaTulipe, Jr, Danbury, CT (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; C23F / ;
U.S. Cl.
CPC ...
156643 ; 156640 ; 156652 ; 156656 ; 156665 ;
Abstract

A process for the fabrication of a vertically differentiated semiconductor structure is disclosed. In this process the semiconductor structure is covered with a vertical erosion control mask. The control mask covering at least one horizontal surface of the semiconductor structure is removed leaving the vertical surface covering intact. An isotropic etching of the uncovered horizontal surface next occurs. Finally, the control mask covering of the vertical surface of the semiconductor structure is removed. This process permits etching treatment of horizontal surface defects without adverse effect on the vertical surface of the semiconductor structure.


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