The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 1988
Filed:
May. 16, 1986
Dennis M Monticelli, Fremont, CA (US);
National Semiconductor Corporation, Santa Clara, CA (US);
Abstract
A peaking capacitor for use with a differential input stage in an integrated circuit. The stage includes emitter degeneration resistors and a peaking capacitor coupled between the emitters. The capacitor is formed of MOS capacitors located over thinned oxide portions that lie within the confines of doped regions forming PN junctions with the semiconductor substrate. The doped regions are spaced apart by a distance that will result in depletion region reach-through at a voltage that is lower than the thinned oxide breakdown voltage. Thus, the structure is self-protecting and therefore resistant to electrostatic discharge damage. The capacitor that is formed has a value that is determined accurately by the area of the thinned oxide. It also has a low stray capacitance which makes it useful as a peaking capacitor.