The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 19, 1988

Filed:

Oct. 23, 1985
Applicant:
Inventor:

Takashi Hada, Tokyo, JP;

Assignee:

NEC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 43 ; 357 40 ; 357 46 ; 357 34 ; 357 38 ; 357 50 ; 357 51 ; 357 55 ; 357 68 ; 357 86 ;
Abstract

For elimination of undesired leakage current, there is disclosed an integrated circuit fabricated in a semiconductor substrate of a first conductivity type which comprises at least first and second semiconductor elements, the first semiconductor element having a first impurity region of a second conductivity type formed in a surface portion of the semiconductor substrate and a second impurity region of the first conductivity type formed in the first impurity region, wherein the second impurity region is connected to the second semiconductor element by a first conductive layer extending on an insulating layer formed on the semiconductor substrate, a junction of the semiconductor substrate and the first impurity region being located under the first conductive layer.


Find Patent Forward Citations

Hada, Takashi. (1988). Integrated circuit fabricated in a semiconductor substrate (U.S. Patent No. 4758872). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4758872

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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