The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 19, 1988

Filed:

Nov. 13, 1985
Applicant:
Inventors:

Gustav E Derkits, Jr, New Providence, NJ (US);

James P Harbison, Summit, NJ (US);

Assignee:

Bell Communications Research, Inc., Livingston, NJ (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 89 ; 148D / ; 148D / ; 148D / ; 148D / ; 148D / ; 156610 ; 156614 ; 357 16 ; 357 56 ; 357 88 ; 437107 ; 437110 ; 437111 ; 437133 ; 437176 ; 437915 ; 437970 ;
Abstract

A process for fabricating a semiconductor-metal-semiconductor electronic device and the device formed thereby from a semiconductor substrate is described. The substrate forms a first active region of the device. A porous layer of conductive material is deposited on the substrate preferably by molecular beam epitaxy forming a control region. A layer of a semiconductor material epitaxially matched to the substrate is then grown on the layer of conductive material so that the layer of semiconductor material forms a second active region of an electronic device.


Find Patent Forward Citations

Derkits, Jr, Gustav. (1988). Process for producing porous refractory metal layers embedded in (U.S. Patent No. 4758534). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4758534

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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