The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 1988
Filed:
Jun. 23, 1987
Applicant:
Inventors:
Hikotaro Masunaga, Tokyo, JP;
Shinji Emori, Urawa, JP;
Assignee:
Fujitsu Limited, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 51 ; 357 65 ; 357 68 ;
Abstract
A semiconductor device includes a diffusion layer in the semiconductor substrate thereof; and an insulation layer is formed on the semiconductor substrate and is provided with a contact window therein, so as to electrically connect a conductive metal layer with the diffusion layer composed of Si atoms as a base material. A Si atom supplier is formed close to the contact window at the area where the Si atoms diffuse into the conductive metal layer. Preferably, the Si atom supplier comprises a dummy contact window similar to the above-mentioned real contact window.