The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 1988
Filed:
Apr. 07, 1986
Applicant:
Inventors:
Assignee:
American Microsystems, Inc., Santa Clara, CA (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 235 ; 357 51 ; 361 58 ; 361 91 ;
Abstract
An oxide fuse, and method of forming same, formed by a thin layer of oxide dielectric between a lower electrode substrate and an upper electrode. A fuse-programming bias of approximately 15V causes Fowler-Nordheim tunneling at low temperature to damage the dielectric layer, and shorts the upper and lower electrodes together. The oxide layer is advantageously formed simultaneously with the gate oxide layer in an EEPROM.