The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 12, 1988

Filed:

Aug. 25, 1986
Applicant:
Inventors:

Tetsuo Ishii, Fujisawa, JP;

Takashi Kimura, Yokohama, JP;

Taira Matsunaga, Yokohama, JP;

Mie Nomura, Fujisawa, JP;

Shoichi Tanimata, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03G / ;
U.S. Cl.
CPC ...
330278 ; 330277 ; 330300 ; 330307 ; 330311 ;
Abstract

The signal-processing circuit of the present invention, more particularly the gain-controlled amplifier circuit, comprises a MOSFET (metal oxide semiconductor field-effect transistor), and an NPN bipolar transistor cascade-connected to the MOSFET. The gain-controlled amplifier circuit amplifiers the signal supplied to the gate of the MOSFET, with the gain corresponding to the voltage applied to the base of the NPN bipolar transistor. The circuit can generate an output signal at one end of the emitter-collector path of the NPN bipolar transistor, said output signal containing negligibly small distortion components; in particular, negligible third distortion components.


Find Patent Forward Citations

Ishii, Tetsuo. (1988). Signal-processing circuit having a field-effect mosfet and bipolar (U.S. Patent No. 4757276). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4757276

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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