The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 1988
Filed:
Jun. 05, 1986
Jack L Jewell, Bridgewater, NJ (US);
Samuel L McCall, Jr, Chatham, NJ (US);
American Telephone and Telegraph Company, AT&T Bell Laboratories, Murray Hill, NJ (US);
Abstract
The inventive method for forming monolithic nonlinear Fabry-Perot etalons comprises depositing on an appropriate substrate, e.g., a GaAs wafer, a first multilayer mirror, depositing on the first mirror a spacer typically comprising optically nonlinear material, and depositing a second multilayer mirror onto the spacer. Typically, at least one of the mirrors is an active mirror comprising optically nonlinear material. Deposition can be by a known process, e.g., by MBE or MOCVD. Since, inter alia, the method comprises no critical etching steps it can be used to produce high finesse etalons that have uniform properties over relatively large areas. The inventive method can be adapted to the manufacture of transmissive etalons. It can also be used to produce arrays of optically isolated etalons. Devices comprising nonlinear etalons manufactured by the inventive method can be incorporated, for instance, into optical data processing apparatus, or into optical communications apparatus.