The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 1988
Filed:
Aug. 15, 1986
Satoshi Maeda, Yokohama, JP;
Hiroshi Iwai, Palo Alto, CA (US);
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A high-performance, high-integration, and a highly reliable semiconductor device has a semiconductor substrate, an element isolation layer of an insulating material which is formed on the semiconductor substrate, a monocrystalline semiconductor layer formed on the portion of the semiconductor substrate and isolated from the element isolation layer, and a semiconductor element formed in the monocrystalline semiconductor layer. The impurity concentration of at least the surface region of the semiconductor substrate which is covered with the element isolation layer is not less than 10.sup.16 /cm.sup.3.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile