The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 1988
Filed:
Aug. 22, 1984
Applicant:
Inventors:
George H Thompson, Sawbridgeworth, GB;
Piers J Dawe, Harlow, GB;
Assignee:
ITT Gallium Arsenide Technology Center, Roanoke, VA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; B44C / ;
U.S. Cl.
CPC ...
357 22 ; 156651 ; 156652 ; 156662 ; 357 41 ; 357 56 ; 437 41 ; 437126 ; 437228 ;
Abstract
The gate of a gallium indium arsenide FET grown on an indium phosphide substrate comprises a top layer of GaInAsP (band gap 1.2 eV) a middle layer of GaInAs and a bottom layer of InP. This can be etched to produce an overhanging top layer which allows self-aligned gate contact metallization avoiding the registration problems of a further masking stage.