The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 1988
Filed:
Feb. 17, 1987
Seiichi Kiyama, Neyagawa, JP;
Yasuaki Yamamoto, Higashi-Osaka, JP;
Hideki Imai, Hirakata, JP;
Yutaka Hirono, Neyagawa, JP;
Sanyo Electric Co., Ltd., , JP;
Abstract
A method of manufacturing a photovoltaic device, in which a plurality of photoelectric conversion elements comprising a first electrode layer, a semiconductive layer and a second electrode layer are laminatedly arranged on an insulative surface of a substrate and said photoelectric conversion elements are electrically connected in series with each other, comprising a step of dividedly arranging the first electrode layer on the surface of the substrate, a step of coating the semiconductive layer on the surface of the substrate including the upper surface of the divided first electrode layer, a step of coating the second electrode layer on the semiconductive layer, and a step of dividing the semiconductive layer and/or the second electrode layer in order to define each element by irradiating energy-beams on the semiconductive layer and/or the second electrode layer. The formation of a low resistance layer in the semiconductive layer and a residual molten second electrode layer can be prevented by using energy-beams having an energy-distribution substantially uniform over the entire irradiated zone. In addition, short-circuits between the adjacent photoelectric conversion elements can be prevented.