The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 1988
Filed:
May. 17, 1984
Applicant:
Inventor:
Brian M Ditchek, Milford, MA (US);
Assignee:
GTE Laboratories Incorporated, Waltham, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B / ; C30B / ; C30B / ;
U.S. Cl.
CPC ...
15662071 ; 15662072 ; 15662073 ; 156604 ; 1566161 ; 156D / ; 156D / ; 156D / ; 4271261 ; 437 99 ; 437170 ; 437173 ; 428700 ; 428620 ; 428623 ;
Abstract
Method of forming alternating narrow strips of conductive metal silicide, specifically cobalt disilicide, and silicon on a substrate as of silicon with a silicon dioxide or silicon nitride surface layer. Cobalt and silicon are deposited on the substrate in the mole ratio of the eutectic composition of cobalt disilicide and silicon. A molten zone is caused to traverse these materials which upon resolidification at the trailing edge of the molten zone segregate into the two eutectic phases forming alternating narrow strata or lamellae of cobalt disilicide and silicon.