The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 28, 1988

Filed:

Sep. 29, 1986
Applicant:
Inventors:

Hiroshi Momose, Yokohama, JP;

Hideki Shibata, Yokohama, JP;

Hiroshi Nozawa, Yokohama, JP;

Assignee:

Kabushiki Kaisha Toshiba, Kawasaki, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 71 ; 357 65 ; 357 68 ;
Abstract

A semiconductor device has a semiconductor substrate, a first insulating layer formed on the substrate, a conductive body formed on the first insulating layer, a second insulating layer formed on the first insulating layer and the conductive body and having a contact hole formed at a contact area to reach the conductive body, and a first conductive layer formed on the second insulating layer and the conductive body. The conductive body has a conductive member formed on the first insulating layer in the contact area, and a second conductive layer formed on the first insulating layer and the conductive member.


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