The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 28, 1988

Filed:

Jan. 28, 1987
Applicant:
Inventor:

Tuvia Liran, Haifa, IL;

Assignee:

National Semiconductor Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03L / ; H01L / ; H01L / ; H03K / ;
U.S. Cl.
CPC ...
3072 / ; 307303 ; 357 236 ;
Abstract

A substrate bias generator of the type that includes a driver for providing an AC signal to a charge pump node, a first switch coupled between the charge pump node and ground such that charge is pumped from the charge pump node to ground when the voltage at the charge pump node is near its peak, and a second switch coupled between the charge pump node and the substrate such that charge is pumped to the charge pump node from the substrate when the voltage at the charge pump node is near its most negative value. A unidirectional switch is provided between the first switch and ground to prevent charge from flowing from ground to the charge pump node when the second switch is open.


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