The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 1988
Filed:
Jan. 15, 1987
Alexander Colquhoun, Heilbronn-Frankenbach, DE;
Telefunken electronic GmbH, Heilbronn, DE;
Abstract
The invention relates to a process for the fabrication of a field-effect transistor as described in German Patent Application No. P 35 35 002.4, corresponding to U.S. application Ser. No. 06/914,540 comprises first covering a semiconductor member with a layer which forms the channel region and part of which is covered with a passivation layer. Impurities are implanted into the exposed regions of the semiconductor surface and form underneath the channel region highly doped source and drain regions. A surface layer of the passivation layer is then removed in a section adjacent to the source region and a gate electrode is formed on the thus exposed narrow area of the channel region.