The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 1988
Filed:
Nov. 21, 1986
Mishel Matloubian, Dallas, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A new way of making sidewall channel stops for silicon on insulator devices (including silicon on oxide, silicon on nitride, and silicon on sapphire devices). While the moat regions 11, 13 (where the active devices will be formed) are covered by thick masking material 24, a high energy implantation step introduces additional doping into exposed silicon regions 14'. Before the mesa etch is performed to isolate the individual active device regions 32 a filament 28 is formed on the walls of the masking material 24 which covers the predetermined locations of the active device regions 32. The mesa etch is then performed using a chemistry which will be blocked not only by the original masking material 24 but also by the sidewall filaments 28. Thus, the doping level defined by implantation into regions 14' will extend into the sidewalls of the mesas 32 for a distance which is controlled not only by the lateral diffusion length of those dopants, but also by the thickness of the sidewall filament 28.