The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 1988
Filed:
Mar. 14, 1986
Applicant:
Inventor:
Hsing C Tuan, Palo Alto, CA (US);
Assignee:
Xerox Corporation, Stamford, CT (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 237 ; 357-2 ; 357 59 ; 357 238 ;
Abstract
A high voltage amorphous silicon thin film transistor including a gate electrode which controls the injection of charge carriers from a superimposed n+ doped amorphous silicon source electrode into an amorphous silicon charge carrier transport layer, spaced from the gate electrode by a dielectric layer, for causing current conduction through the transport layer to a laterally offset drain electrode. The source electrode is in charge injecting contact with the transport layer and the drain electrode is in collecting contact with the transport layer.