The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 1988
Filed:
Jul. 08, 1987
Ronald C Gonsiorawski, Danvers, MA (US);
George Czernienko, Lowell, MA (US);
Mobil Solar Energy Corporation, Billerica, MA (US);
Abstract
A process of manufacturing silicon solar cells with efficiencies of between about 12.5% and about 16.0% is described, the method being characterized by forming a P/N junction adjacent the front surface of a silicon substrate, subjecting the front surface of the substrate to a selected plasma surface etch treatment, and then forming a polysilazane coating on the etched front surface by (a) first subjecting the substrate to an ammonia plasma treatment for a predetermined period of time so as to produce hydrogen implantation and (b) subjecting the subtrate to a silane and ammonia plasma treatment to obtain additional hydrogen implantation and formation of a polysilazane (hydrogenated silicon nitride) coating. The polysilazane coating is etched to form a grid electrode pattern. An aluminum coating is applied to the rear side of the substrate so as to form a back electrode. The aluminum coating is heated so as to alloy with the silicon substrate and thereby form an ohmic contact. The alloying step also densifies the polysilazane so that it is more nearly silicon nitride. The exposed silicon on the front side of the substrate is coated with an adherent coating of a highly conductive metal so as to form a grid electrode.