The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 1988
Filed:
Jun. 25, 1986
Koichi Sassa, Fuchu, JP;
Kenji Tomizawa, Ohmiya-shi, Saitama, JP;
Research Development Corporation of Japan, Tokyo, JP;
Other;
Abstract
A method for growing single crystals of a dissociative compound semiconductor which are pulled in an atmosphere of a gas of a volatile component of the dissociative compound filled in an inner chamber sealed within a growth apparatus is provided wherein the space of the inner chamber is divided into different parts by means of partition wall, which is disposed in the inner chamber and the lower part of which is immersed in a melt contained in a crucible, thereby high quality single crystals with a correct stoichiometric composition can be grown under the constant conditions of temperature and pressure without detrimental effects due to thermal convection in the crystal growth region and the melt. The partition wall may be made either of a monolithic structure or a composite structure capable of being divided into two parts, an upper member and a lower member like a float, the upper part of the lower member is vertically movably inserted into upper member.