The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 1988
Filed:
Nov. 19, 1985
Shigeo Kuninobu, El Cerrito, CA (US);
Eisuke Ichinohe, Katano, JP;
Matsushita Electric Industrial Co., Ltd., Kadoma, JP;
Abstract
In a C MOS IC as shown in FIG. 7(A) and FIG. 8, the IC comprises vertical row of horizontally long blocks, each block comprising p-type MOS transistor region and n-type MOS transistor region, the IC comprises horizontal wirings of aluminum (31, 32, 33) and vertical wirings of polycrystalline silicon (61, 62, 63, 64, 65, 41, 42), with insulation films on the upper side and on the lower side of the polycrystalline silicon film, between the rows (I, II, . . .), said horizontal aluminum wirings (31, 32, 33) and said polycrystalline silicon wiring (61, 62 . . ., 41, 42) being appropriately connected through openings (105, 105 . . .) formed in said insulation film inbetween, said vertical polycrystalline silicon wirings being connected through aluminum wirings in said blocks.