The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 1988
Filed:
Nov. 24, 1986
Stephen C Cripps, Sunnyvale, CA (US);
John R Anderson, Sunnyvale, CA (US);
Gary J Policky, Los Gatos, CA (US);
Celeritek, Inc., San Jose, CA (US);
Abstract
A field effect transistor microwave circuit device includes first and second field effect transistors having common source connections with a pair of coupled transmission lines connecting the drain of a first transistor to the source of the second transistor and the source of the first transistor to the gate of the second transistor. The cross coupled transmission lines function as a balun between the transistors. The device is formed in III-V semiconductor and has an increased operating range in microwave frequencies. In alternative embodiments, the balun is connected to the circuit output thereby permitting the cascading of a plurality of FET devices. The balun can be integrated into the device structure or connected as a discrete element in a hybrid circuit arrangement.