The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 1988
Filed:
Feb. 27, 1987
Philippe Jarry, Sucy-en-Brie, FR;
U.S. Philips Corp., New York, NY (US);
Abstract
A charge coupled device (CCD) sensitive to infrared radiation composed of a succession of three layers of Group III-V semiconductor material. The layers are a window layer, a sensitive layer and a storage layer. The layers are fixed to a supporting plate serving as input for the radiation and as a rear surface of the device. The front surface of the device supports a plurality of control electrodes and at least one output electrode. The window layer and the storage layer of the CCD are made of a binary compound AB. The sensitive layer is made of an n-ary compound (A,X,Y . . . ).sub.III (B,M,N . . . ).sub.V having a larger forbidden energy band and a smaller absorption limit wavelength than the window and storage layers. The three layers of the device are formed by epitaxial growth on a substrate. The substrate is a layer of the binary compound AB coated with an epitaxial layer of the n-ary compound. The epitaxial substrate layer is a chemical blocking layer. The substrate and the chemical blocking layer are subsequently removed chemically.