The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 1988
Filed:
Feb. 28, 1986
Nobuhiro Fukuda, Totsuka-ku, Yokohama-shi, Kanagawa 244, JP;
Yutaka Ohashi, Kamakura-shi, Kanagawa 247, JP;
Kenji Miyaji, Totsuka-ku, Yokohama-shi, Kanagawa 244, JP;
Other;
Abstract
The speed of forming a film of a hydrogenated amorphous silicon (a-Si:H) can be increased by controlling the amount of a supplied energy in relation to the film-forming speed. Application of this technique to the production of a solar cell enables a hydrogenated amorphous silicon solar cell (a-Si:H cell) having a high photoelectric conversion efficiency to be produced at high speeds. The aforesaid controlling procedure comprises adjusting the amount (KJ/g-Si.sub.2 H.sub.6) of an energy to be supplied to a film-forming speed depends mainly upon the flow rate of the gas and is not substantially affected by the amount of the energy.