The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 1988
Filed:
Dec. 11, 1986
Applicant:
Inventors:
John C Christenson, Kokomo, IN (US);
Peter J Schubert, Kokomo, IN (US);
Assignee:
General Motors Corporation, Detroit, MI (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; C30B / ;
U.S. Cl.
CPC ...
156644 ; 437 89 ; 437 90 ; 437249 ; 156612 ; 156657 ;
Abstract
A method of fabricating single crystal silicon in a 'mushroom' shape for use in fabricating devices such as a Silicon-On-Insulator-Like MOSFET. One embodiment of the inventive method entails fabricating a hole-within-a-hole structure in a thick silicon dioxide layer disposed on a single crystal silicon substrate, growing single crystal silicon in the inner hole, etching back the silicon dioxide layer to expose a portion of the silicon in the inner hole, and growing single crystal silicon by selective epitaxial growth in the outer hole.