The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 1988
Filed:
Jun. 26, 1987
Applicant:
Inventor:
Mark D Griswold, Chandler, AZ (US);
Assignee:
Motorola Inc., Schaumburg, IL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 43 ; 437 46 ; 437161 ; 357 59 ;
Abstract
A new and improved method using the deposition of amorphous silicon for the formation of semiconductor memory device interlevel dielectrics. After the deposition of a first polysilicon layer, an amorphous silicon layer is deposited thereon. The polysilicon layer and amorphous silicon layer are etched to form a floating gate. The amorphous silicon layer allows for the growth of thermal oxide layers to take place at lower temperatures thereby decreasing the temperature at which the oxide layers are grown while still repressing the asperity formation. This allows for high quality oxide insulation layers.